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| savantic semiconductor product specification silicon npn power transistors BUS14A d escription with to-3 package high voltage ,high speed applications converters inverters switching regulators motor controls pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ) symbol parameter conditions max unit v cbo collector-base voltage open emitter 1000 v v ceo collector-emitter voltage open base 450 v v ebo emitter-base voltage open collector 9 v i c collector current 30 a i cm collector current-peak 50 a i b base current 6 a i bm base current-peak 10 a p t total power dissipation t mb =25 250 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-mb thermal resistance from junction to mounting base 0.7 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BUS14A characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a ; i b =0; l=25mh 450 v v ce(sat) collector-emitter saturation voltage i c =16a; i b =3.2a 1.5 v v be(sat) base-emitter saturation voltage i c =16a; i b =3.2a 1.7 v i ces collector cut-off current v ce =ratedbv ceo ; v be =0 t c =125 1 5 ma i ebo emitter cut-off current v eb =9v; i c =0 10 ma h fe dc current gain i c =2a ; v ce =5v 15 50 switching times t on turn-on time 1.0 s t s storage time 4.0 s t f fall time i c =16a; i b1 =- i b2 =3.2a 0.8 s savantic semiconductor product specification 3 silicon npn power transistors BUS14A package outline fig.2 outline dimensions |
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